Low Temperature Synthesis of Trigonal Fe<sub>2</sub>Si Nanosheets at Fe/Amorphous SiO<sub>x</sub> Interfaces by Electronic Excitation — ASN Events

Low Temperature Synthesis of Trigonal Fe<sub>2</sub>Si Nanosheets at Fe/Amorphous SiO<sub>x</sub> Interfaces by Electronic Excitation — ASN Events

Low Temperature Synthesis of Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiO_x Interfaces by Electronic Excitation

Low Temperature Synthesis of Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiO_x Interfaces by Electronic Excitation (113663)

KAZUHISA SATO ¹ , YUTA FUJII ¹

Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, OSAKA, Japan

Authors contributing to this presentation.

SATO, K

Kazuhisa Sato received his Ph.D degree in Materials Science from Osaka University, Japan (2005). Now he is a faculty member of the Research Center for Ultra-High Voltage Electron Microscopy, Osaka University (October 2015–present). His research activities focus on atomic structures, lattice defects, and phase transition of nanostructured materials and metals/inorganic solids by means of advanced electron microscopy techniques, including high-voltage electron microscopy (HVEM), aberration-corrected (scanning) transmission electron microscopy (AC-STEM/TEM), electron tomography (3D-ET), low-voltage scanning electron microscopy (SEM), and image simulations. In recent years he has also embarked on photoelectron spectroscopy using synchrotron radiation to elucidate defect processes in solids via excitation, in view of developing a novel solid phase reaction that utilize electronic excitation. He is the author of 150 refereed papers (including 50 first author papers). His honors include Osaka University Prize (2019), the Japan Institute of Metals and Materials Meritorious Award (2019), the Murakami Young Researcher Award (2013), and the Japanese Society for Microscopy Young Researcher Award (2012).

FUJII, Y